SiGe and Si strained-layer epitaxy for silicon heterostructure devices [electronic resource] / edited by John D. Cressler
Publication details: Boca Raton : CRC Press/Taylor & Francis, c2008ISBN:- 9781420066852
- 1420066854
- Silicon heterostructure handbook
- 621.3815/28 22
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'The material was previously published in Silicon heterostructure handbook : materials, fabrication, devices, circuits and applications of SiGe and Si strained-layer epitaxy, Taylor and Francis, 2005'--T.p. verso
Includes bibliographical references and index
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