SiGe and Si strained-layer epitaxy for silicon heterostructure devices
SiGe and Si strained-layer epitaxy for silicon heterostructure devices [electronic resource] /
edited by John D. Cressler
- Boca Raton : CRC Press/Taylor & Francis, c2008
Access to 2http://www.engnetbase.com/ejournals/search/advsearch1.asp3 and type in the title. You may access the full text after you type in the advanced search screen 'The material was previously published in Silicon heterostructure handbook : materials, fabrication, devices, circuits and applications of SiGe and Si strained-layer epitaxy, Taylor and Francis, 2005'--T.p. verso
Includes bibliographical references and index
9781420066852 1420066854
2007-030343
Bipolar transistors--Materials
Heterostructures
Silicon--Electric properties
Epitaxy
621.3815/28
Access to 2http://www.engnetbase.com/ejournals/search/advsearch1.asp3 and type in the title. You may access the full text after you type in the advanced search screen 'The material was previously published in Silicon heterostructure handbook : materials, fabrication, devices, circuits and applications of SiGe and Si strained-layer epitaxy, Taylor and Francis, 2005'--T.p. verso
Includes bibliographical references and index
9781420066852 1420066854
2007-030343
Bipolar transistors--Materials
Heterostructures
Silicon--Electric properties
Epitaxy
621.3815/28