| 000 | 00877nam a2200277 a 4500 | ||
|---|---|---|---|
| 005 | 20250913104116.0 | ||
| 008 | 981208s1989 si 00 eng | ||
| 020 | _a9971506157 | ||
| 035 | _a433469 | ||
| 039 | 9 |
_a200502231739 _bhamzah _c200108091702 _ddollah _y08-18-1999 _zload |
|
| 090 | _aQD181.S6A56 | ||
| 090 | _aQD181 | ||
| 245 | 0 | 0 |
_aAmorphous sillicon and related materials / _ceditors Hellmut Fritzsch |
| 260 |
_aSingapore : _bWorld Scientific, _c1989 |
||
| 300 |
_a2 v. ; _c22 cm. |
||
| 440 | 0 | _aAdvances in disordered semiconductors | |
| 650 | 0 | _aSilicon | |
| 650 | 0 | _aAmorphous substances | |
| 700 | 1 | _aFritzche, Hellmmut | |
| 907 |
_a.b10076852 _b2021-05-28 _c2019-11-12 |
||
| 942 |
_c01 _n0 _kQD181.S6A56 |
||
| 914 | _avtls000008085 | ||
| 991 | _aFakulti Sains Fizik dan Gunaan | ||
| 998 |
_at _b1999-05-08 _cm _da _feng _gsi _y0 _z.b10076852 |
||
| 999 |
_c9717 _d9717 |
||