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| 005 | 20250930094920.0 | ||
| 008 | 981208s1982 us 001 0 eng d | ||
| 020 | _a0890060908 | ||
| 039 | 9 |
_a201112161041 _bzaleha _c201105051647 _dzaleha _c201105051645 _dzaleha _c200109241045 _dasmany _y08-18-1999 _zload |
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| 040 | _dUKM | ||
| 090 | _aTK7871.95.G27 | ||
| 090 |
_aTK7871.95 _b.G27 |
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| 245 | 0 | 0 |
_aGaAs FET principles and technology / _cJames V. DiLorenzo, editor in chief Deen D. Khandelwal. |
| 260 |
_aDedham, Mass. : _bArtech House, _c1982. |
||
| 300 |
_a773 p. : _bill. ; _c24 cm. |
||
| 504 | _aIncludes bibliographical references and index | ||
| 650 | 0 | _aField-effect transistors. | |
| 650 | 0 |
_aGallium arsenide. _959809 |
|
| 700 | 1 | _aDiLorenzo, James V. | |
| 700 | 1 | _aKhandelwal, Deen D. | |
| 907 |
_a.b10837838 _b2021-05-28 _c2019-11-12 |
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_c01 _n0 _kTK7871.95.G27 |
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| 914 | _avtls000087021 | ||
| 991 | _aFakulti Sains Fizik dan Gunaan | ||
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_at _b1999-05-08 _cm _da _feng _g _y0 _z.b10837838 |
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_c85631 _d85631 |
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