000 01539nam a2200373 i 4500
005 20250930141511.0
008 160617s2015 my a m 000 0 may d
039 9 _a201611071546
_basrul
_c201611010857
_dadibah
_y06-17-2016
_zmiza
040 _aUKM
_erda
090 _aTK7871.99.M44A355 2015 3 tesis
090 _aTK7871.99.M44
_bA355 2015 3
100 0 _aAfifah Maheran Abdul Hamid,
_eauthor.
245 1 0 _aRekabentuk dan pengoptimuman parameter proses MOSFET planar berteknologi 22 nm menggunakan kaedah Taguchi /
_cAfifah Maheran binti Abdul Hamid.
264 0 _c2015.
300 _axxi, 186 pages :
_billustrations ;
_c30 cm.
336 _atext
_2rdacontent
337 _aunmediated
_2rdamedia
338 _avolume
_2rdacarrier
502 _aTesis (Ph.D.)- Universiti Kebangsaan Malaysia, 2015.
504 _aRujukan : mukasurat 158-166.
610 2 0 _aUniversiti Kebangsaan Malaysia
_xDissertations.
_962865
650 0 _aMetal oxide semiconductor field-effect transistors.
650 0 _aTitanium dioxide.
650 0 _aTaguchi methods (Quality control).
650 0 _aDissertations, Academic
_zMalaysia.
_962866
907 _a.b16344042
_b2025-07-18
_c2019-11-12
942 _c3
_n0
_kTK7871.99.M44A355 2015 3 tesis
914 _avtls003608269
990 _armn/aa
991 _aInstitut Kejuruteraan Mikro dan Nanoelektronik (IMEN)
998 _al
_b2016-04-06
_cm
_dx
_fmay
_gmy
_y0
_z.b16344042
999 _c611740
_d611740