| 000 | 03276cam a22004094a 4500 | ||
|---|---|---|---|
| 005 | 20250919010709.0 | ||
| 008 | 160203s2003 njua b 001 0 eng | ||
| 020 |
_a013061792X _qpaperback |
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| 020 |
_a9780130617927 _qpaperback _cRM387.00 |
||
| 039 | 9 |
_a201606281108 _bhaiyati _c201606271503 _dasrul _c201606270833 _dros _y02-03-2016 _zros |
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| 040 |
_aDLC _beng _cDLC _dBAKER _dBTCTA _dYDXCP _dUQ1 _dIG# _dZWZ _dHEBIS _dDEBBG _dOCL _dEXW _dDEBSZ _dOCLCF _dOCLCO _dOCLCQ _dRBN _dUKM _erda |
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| 090 | _aTK7871.85.P544 2003 3 | ||
| 090 |
_aTK7871.85 _b.P544 2003 3 |
||
| 100 | 1 |
_aPierret, Robert F., _eauthor. |
|
| 245 | 1 | 0 |
_aAdvanced semiconductor fundamentals / _cRobert F. Pierret. |
| 246 | 1 | 8 | _ispine title : Advanced semiconductor fundamentals. |
| 250 | _aSecond edition | ||
| 264 | 1 |
_aUpper Saddle River, N.J. : _bPrentice Hall, _cò003. |
|
| 264 | 4 | _c©2003. | |
| 300 |
_ax, 221 pages : _billustrations ; _c24 cm. |
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| 336 |
_atext _2rdacontent |
||
| 337 |
_aunmediated _2rdamedia |
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| 338 |
_avolume _2rdacarrier |
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| 490 | 1 |
_aModular series on solid state devices ; _vv. 6 |
|
| 504 | _aIncludes bibliographical references and index. | ||
| 505 | 0 | 0 |
_tBasic Semiconductor Properties -- _tGeneral Material Properties -- _tCrystal Structure -- _tThe Unit Cell Concept -- _tSimple 3-D Unit Cells -- _tBravais Lattices and Crystal Systems -- _tSpecific Semiconductor Lattices -- _tMiller Indices -- _tExample Use of Miller Indices -- _tWafer Surface Orientation -- _tWafer Flats and Notches -- _tPattern Alignment -- _tElements of Quantum Mechanics -- _tThe Quantum Concept -- _tBlackbody Radiation -- _tThe Bohr Atom -- _tWave-Particle Duality -- _tBasic Formalism -- _tGeneral Formulation -- _tTime-Independent Formulation -- _tSimple Problem Solutions -- _tThe Free Particle -- _tParticle in a 1-D Box -- _tFinite Potential Well -- _tEnergy Band Theory -- _tPreliminary Considerations -- _tSimplifying Assumptions -- _tThe Bloch Theorem -- _tApproximate One-Dimensional Analysis -- _tKronig-Penney Model -- _tMathematical Solution -- _tEnergy Bands and Brillouin Zones -- _tParticle Motion and Effective Mass -- _tCarriers and Current -- _tExtrapolation of Concepts to Three Dimensions -- _tBrillouin Zones -- _tE-k Diagrams -- _tConstant-Energy Surfaces -- _tEffective Mass -- _tGe, Si, and GaAs -- _tMeasurement -- _tBand Gap Energy -- _tEquilibrium Carrier Statistics -- _tDensity of States -- _tGeneral Derivation -- _tSpecific Materials -- _tConduction Band--GaAs -- _tConduction Band--Si, Ge -- _tValence Band--Ge, Si, GaAs -- _tFermi Function -- _tProblem Specification -- _tDerivation Proper -- _tConcluding Discussion -- _tSupplemental Information -- _tEquilibrium Distribution of Carriers -- _tThe Energy Band Diagram -- _tDonors, Acceptors, Band Gap Centers. |
| 650 | 0 | _aSemiconductors. | |
| 830 | 0 |
_aModular series on solid state devices ; _vv. 6. |
|
| 907 |
_a.b16268180 _b2019-11-12 _c2019-11-12 |
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| 942 |
_c01 _n0 _kTK7871.85.P544 2003 3 |
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| 914 | _avtls003599867 | ||
| 990 | _aasr | ||
| 991 | _aFakulti Kejuruteraan dan Alam Bina | ||
| 998 |
_al _b2016-03-02 _cm _da _feng _gnju _y0 _z.b16268180 |
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| 999 |
_c604471 _d604471 |
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