| 000 | 01465nam a2200361 i 4500 | ||
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| 005 | 20250930140952.0 | ||
| 008 | 151118s2015 my dal m 000 0 may d | ||
| 039 | 9 |
_a201512101632 _bathirah _y11-18-2015 _zzarina |
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| 040 |
_aUKM _erda |
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| 090 | _aTK7871.95.A834 2015 tesis | ||
| 090 |
_aTK7871.95 _b.A834 2015 |
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| 100 | 0 |
_aAsban Dolah, _eauthor. |
|
| 245 | 1 | 0 |
_aKesan sepuhlindap ke atas ciri elektrik sentuhan Ohmik dan Schottky untuk peranti transistor elektron berkelincahan tinggi (HEMTs) / _cAsban Dolah. |
| 264 | 0 | _c2015. | |
| 300 |
_axiv, 127 pages, _bcharts, illustrations, samples ; _c30 cm. |
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| 336 |
_atext _2rdacontent |
||
| 337 |
_aunmediated _2rdamedia |
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| 338 |
_avolume _2rdacarrier |
||
| 502 | _aTesis (Sarjana Sains) - Universiti Kebangsaan Malaysia, 2015. | ||
| 504 | _aRujukan : mukasurat [93]-100. | ||
| 610 | 2 | 0 |
_aUniversiti Kebangsaan Malaysia _xDissertations. _962865 |
| 650 | 0 | _aMetal semiconductor field-effect transistors. | |
| 650 | 0 |
_aGallium arsenide semiconductors. _959810 |
|
| 650 | 0 |
_aDissertations, Academic _zMalaysia. _962866 |
|
| 907 |
_a.b16235320 _b2020-09-28 _c2019-11-12 |
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| 942 |
_c3 _n0 _kTK7871.95.A834 2015 tesis |
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| 914 | _avtls003596321 | ||
| 990 | _aszj/athirah | ||
| 991 | _aFakulti Sains dan Teknologi | ||
| 998 |
_at _b2015-05-11 _cm _dx _fmay _gmy _y0 _z.b16235320 |
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| 999 |
_c601223 _d601223 |
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