000 01432nam a2200373 i 4500
005 20250930135250.0
008 140227s2013 my a bm 000 0 may d
039 9 _a201404240927
_blan
_c201404211732
_dhendon
_c201404211731
_dhendon
_y02-27-2014
_zmiza
040 _aUKM
_erda
090 _aTK7871.89.S35I837 2013 tesis
090 _aTK7871.89.S35
_bI837 2013 tesis
100 0 _aIshak Mansor,
_eauthor.
245 1 0 _aFabrikasi dan pencirian diod Schottky 4H-SiC /
_cIshak bin Mansor.
264 1 _c2013.
300 _axxiii, 229 pages :
_billustrations ;
_c30 cm.
336 _atext
_2rdacontent.
337 _aunmediated
_2rdamedia.
338 _avolume
_2rdacarrier.
500 _aCd yang disertakan adalah duplikasi kepada tesis bercetak dan tidak boleh dirujuk/dipinjam.
502 _aTesis (Ph.D.) - Universiti Kebangsaan Malaysia, 2013.
504 _aRujukan : page [154]-169.
610 2 0 _aUniversiti Kebangsaan Malaysia
_xDissertations.
_962865
650 0 _aDissertations, Academic
_zMalaysia.
_962866
650 0 _aDiodes, Schottky-barrier
_xClassification.
650 0 _aLight emitting diodes.
650 0 _aSemiconductors
_xJunctions.
907 _a.b15833653
_b2019-11-12
_c2019-11-12
942 _c3
_n0
_kTK7871.89.S35I837 2013 tesis
914 _avtls003551803
990 _armn/ha
991 _aFakulti Sains dan Teknologi
998 _at
_b2014-01-02
_cm
_da
_fmay
_gmy
_y0
_z.b15833653
999 _c563428
_d563428