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| 005 | 20250918232810.0 | ||
| 008 | 140107m20072012njua b 001 0 eng c | ||
| 020 | _a9789810217280 (v. 1) | ||
| 020 | _a9810217285 (v. 1) | ||
| 020 |
_a9789812835055 (v. 2) _cRM430.32 |
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| 020 | _a9812835059 (v. 2) | ||
| 039 | 9 |
_a201401231222 _bbaiti _y01-07-2014 _zmazarita |
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| 040 |
_aNLGGC _beng _cNLGGC _dDLC _dBAKER _dBTCTA _dYDXCP _dZCU _dVRC _dIG# _dU9S _dHEBIS _dDEBBG _dOCLCQ _dOCL _dOCLCQ _dDEBSZ _dBDX _dCUY _dMYG _dOCLCF _dUKM |
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| 090 | _aTK7871.99.C65O338 | ||
| 090 |
_aTK7871.99.C65 _bO338 |
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| 100 | 1 | _aOda, O. | |
| 245 | 1 | 0 |
_aCompound semiconductor bulk materials and characterizations / _cOsamu Oda. |
| 260 |
_aNew Jersey : _bWorld Scientific, _c2007-2012. |
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| 300 |
_a2 v. : _bill. ; _c26 cm. |
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| 504 | _aIncludes bibliographical references and indexes. | ||
| 505 | 0 | 0 |
_gv. 1. _g1. _tPhysical properties ; _g2. _tCrystal growth methods ; _g3. _tPrinciples of crystal growth ; _g4. _tDefects ; _g5. _tCharacterization ; _g6. _tApplication ; _g7. _tGaP ; _g8. _tGaAs ; _g9. _tGaSb ; _g10. _tInP ; _g11. _tInAs ; _g12. _tInSb ; _g13. _tCdS ; _g14. _tCdSe ; _g15. _tCdTe ; _g16. _tZnS ; _g17. _tZnSe ; _g18. _tZnTe -- _gv. 2. _g19. _tIII-V mixed crystals ; _g20. _tNitride and other III-V compounds ; _g21. _tZnO ; _g22. _tMercury compounds ; _g23. _tSiC ; _g24. _tLead compounds ; _g25. _tChalcopyrite compounds ; _gAppendix. _tRaw materials. |
| 650 | 0 | _aCompound semiconductors. | |
| 856 | 4 | 1 |
_3Table of contents _uhttp://catdir.loc.gov/catdir/toc/fy0803/2007300280.html |
| 907 |
_a.b15802012 _b2019-11-12 _c2019-11-12 |
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| 942 |
_c01 _n0 _kTK7871.99.C65O338 |
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| 914 | _avtls003548320 | ||
| 990 | _abaiti | ||
| 991 | _aFakulti Sains dan Teknologi | ||
| 998 |
_at _b2014-07-01 _cm _da _feng _gnju _y0 _z.b15802012 |
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| 999 |
_c560322 _d560322 |
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