000 01019nam a2200265 a 4500
005 20250913115939.0
007 he am baa
008 981208s1985 xxu bm 00 eng
039 9 _a200708161716
_brashid
_y08-18-1999
_zload
090 _amikrofis tesis QC611.6.D4S96 1985
090 _amikrofis tesis QC611.6.D4
_bS96 1985
100 1 _aSundaram, Lalgudi M. G.
245 1 0 _aDefect characterization in semiconductors by deep level transient spectroscopy
_h[microform] /
_cby Lalgudi M. G. Sundaram
260 _aAnn Arbor, Mich. :
_bUniversity Microfilms International ,
_c1985
300 _a3 microfiches ;
_c11 x 15 cm.
502 _aThesis (Ph.D.) - Rensselaer Polytechnic Institute, 1984
650 0 _aSemiconductors
_xDefects
907 _a.b10515227
_b2021-05-28
_c2019-11-12
942 _c3
_n0
_kmikrofis tesis QC611.6.D4S96 1985
914 _avtls000053639
990 _ar
991 _aFakulti Sains Fizik dan Gunaan
998 _at
_b1999-05-08
_cm
_da
_feng
_gxxu
_y0
_z.b10515227
999 _c53457
_d53457