000 01332nam a22003374a 4500
005 20250918162034.0
008 120515s2011 enka b 001 0 eng
010 _a2011-008131
016 7 _a015786521
_2Uk
020 _a9781848212312 (hbk)
039 9 _a201208021147
_bbaiti
_c201207131004
_didah
_c201205151733
_didah
_y05-15-2012
_zidah
040 _aUKM
090 _aTK7871.85.S555 3
090 _aTK7871.85
_b.S555
245 0 0 _aSilicon technologies :
_bion implantation and thermal treatment /
_cedited by Annie Baudrant.
260 _aLondon :
_bWiley,
_c2011.
300 _axvii, 337 p. :
_bill. ;
_c24 cm.
504 _aIncludes bibliographical references and index.
520 _aThe main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion.
650 0 _aSemiconductor doping.
650 0 _aIon implantation.
650 0 _aSemiconductors
_xHeat treatment.
700 1 _aBaudrant, Annie.
907 _a.b15363430
_b2019-11-12
_c2019-11-12
942 _c01
_n0
_kTK7871.85.S555 3
914 _avtls003500770
990 _abaiti
991 _aFakulti Kejuruteraan dan Alam Bina
998 _al
_b2012-02-05
_cm
_da
_feng
_genk
_y0
_z.b15363430
999 _c520051
_d520051