| 000 | 01306cam a2200349 a 4500 | ||
|---|---|---|---|
| 005 | 20250918130135.0 | ||
| 008 | 110321s2010 nyua bi 001 0 eng | ||
| 020 |
_a9781608761883 (hbk.) _cRM261.13 |
||
| 020 | _a1608761886 (hbk.) | ||
| 039 | 9 |
_a201311281758 _blan _c201103281446 _dariff _y03-21-2011 _zmazarita |
|
| 040 | _aUKM | ||
| 090 | _aQC611.8.M4K377 | ||
| 090 |
_aQC611.8.M4 _bK377 |
||
| 100 | 1 |
_aKaschieva, S., _d1962- |
|
| 245 | 1 | 0 |
_aRadiation defects in ion implanted and/or high-energy irradiated MOS structures / _cS. Kaschieva and S.N. Dmitriev. |
| 260 |
_aNew York : _bNova Science Publishers, _c2010. |
||
| 300 |
_aix, 195 p. : _bill. (some col.) ; _c24 cm. |
||
| 490 | 1 | _aElectrical engineering developments series. | |
| 504 | _aIncludes bibliographical references and index. | ||
| 650 | 0 | _aMetal oxide semiconductors. | |
| 650 | 0 | _aSemiconductor doping. | |
| 650 | 0 |
_aSemiconductors _xEffect of radiation on. |
|
| 650 | 0 | _aIon implantation. | |
| 700 | 1 |
_aDmitriev, S. N., _d1961- |
|
| 830 | 0 | _aElectrical engineering developments series. | |
| 907 |
_a.b14977576 _b2021-05-28 _c2019-11-12 |
||
| 942 |
_c01 _n0 _kQC611.8.M4K377 |
||
| 914 | _avtls003459836 | ||
| 991 | _aFakulti Sains & Teknologi | ||
| 998 |
_at _b2011-08-03 _cm _da _feng _gnyu _y0 _z.b14977576 |
||
| 999 |
_c482560 _d482560 |
||