000 01178nam a2200301 a 4500
005 20250930131302.0
007 hd ufu baaa
008 101228s2006 my d am 000 0 may
039 9 _y12-28-2010
_znordin
090 _amikrofilem tesis TK7871.95
_b.K493 2010
100 0 _aKhairul Nisha Mohd. Kharuddin
245 1 0 _aKajian tentang ciri-ciri elektrik transistor elektron kelincahan tinggi pseudomorfik (PHEMT) dalam regim nano
_h[microform] /
_cKhairul Nisha bt. Mohd. Kharuddin
260 _aBangi :
_bPerpustakaan Tun Seri Lanang,
_c2010
300 _a1 microfilm reel ;
_c35 mm.
502 _aTesis (Sarjana Sains) - Universiti Kebangsaan Malaysia, 2006
610 2 0 _aUniversiti Kebangsaan Malaysia
_xDissertations
_962865
650 0 _aDissertations, Academic
_zMalaysia
_962866
650 0 _aField-effect transistors
650 0 _aHeterojunctions
650 0 _aNanostructures
_960468
907 _a.b14879104
_b2022-05-23
_c2019-11-12
942 _c3
_n0
_kmikrofilem tesis TK7871.95 .K493 2010
914 _avtls003449555
990 _anordin
991 _aFakulti Kejuruteraan
998 _at
_b2010-02-12
_cm
_dy
_fmay
_gmy
_y0
_z.b14879104
999 _c474472
_d474472