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| 008 | 090701s2007 nyua sb 001 0 eng | ||
| 010 | _a2006-031518 | ||
| 020 | _a9780750309936 (alk. paper) | ||
| 020 | _a0750309938 (alk. paper) | ||
| 035 | _a(OCoLC)ocm71833283 | ||
| 035 | _a(OCoLC)71833283 | ||
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_aTK7871.95 _b.M27 2007 |
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| 100 | 1 | _aMaiti, C. K. | |
| 245 | 1 | 0 |
_aStrained-Si heterostructure field effect devices _h[electronic resource] / _cC.K. Maiti, S. Chattopadhyay, L.K. Bera |
| 246 | 3 | _aStrained silicon heterostructure field effect devices | |
| 260 |
_aNew York : _bTaylor & Francis, _cc2007 |
||
| 440 | 0 | _aSeries in materials science and engineering | |
| 500 | _aAccess to 2http://www.egnetbase.com/ejournals/search/advsearch1.asp3 and type in the title. You may access the full text after you type in the advanced search screen | ||
| 504 | _aIncludes bibliographical references and index | ||
| 650 | 0 | _aMetal oxide semiconductor field-effect transistors | |
| 650 | 0 |
_aSilicon _xElectric properties |
|
| 700 | 1 |
_aChattopadhyay, Swapan, _d1952- |
|
| 700 | 1 | _aBera, L. K. | |
| 856 | 4 | 0 | _uhttps://eresourcesptsl.ukm.remotexs.co/login?url=http://www.egnetbase.com/ejournals/search/advsearch1.asp |
| 856 | 4 | 0 |
_3CRCnetBASE _uhttp://www.engnetbase.com/ejournals/books/book_km.asp?id=5555 _zClick here for the electronic version |
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