000			01921cam a22003974a 4500
005			20250918011709.0
006			m d
007			cr cn ---ancau
008			090701s2005 flua sb 001 0 eng
010			_a2005-041376
020			_a0849335590 (alk. paper)
035			_a13877021
039		9	_y07-01-2009 _zpuitm2
040			_aUKM
042			_apcc
082	0	0	_a621.3815/28 _222
090			_aTK7871.96.B55 _bS55 2005
245	0	0	_aSilicon heterostructure handbook _h[electronic resource] : _bmaterials, fabrication, devices, circuits, and applications of SiGe and Si strained-layer epitaxy / _cedited byJohn D. Cressler
260			_aBoca Raton, FL : _bCRC Taylor & Francis, _c2006
500			_aAccess to 2http://www.egnetbase.com/ejournals/search/advsearch1.asp3 and type in the title. You may access the full text after you type in the advanced search screen
504			_aIncludes bibliographical references and index
650		0	_aBipolar transistors _vHandbooks, manuals, etc.
650		0	_aSilicon _vHandbooks, manuals, etc.
700	1		_aCressler, John D.
856	4	0	_uhttps://eresourcesptsl.ukm.remotexs.co/login?url=http://www.egnetbase.com/ejournals/search/advsearch1.asp
856	4	0	_3CRCnetBASE _uhttp://www.engnetbase.com/ejournals/books/book_km.asp?id=5415 _zClick here for the electronic version
907			_a.b14529968 _b2022-04-06 _c2019-11-12
942			_n0 _kTK7871.96.B55 S55 2005
914			_avtls003412781
906			_a7 _bcbc _corignew _d1 _eocip _f20 _gy-gencatlg
990			_aLiza
998			_ae _b2009-01-07 _cm _dz _feng _gflu _y0 _z.b14529968
999			_c445223 _d445223