000			02231cam a2200469 a 4500
005			20250918011656.0
006			m d
007			cr cn ---ancau
008			090626s2008 flua sb 001 0 eng
010			_a2007-030343
020			_a9781420066852
020			_a1420066854
035			_a(OCoLC)ocn159822251
035			_a(OCoLC)159822251 _z(OCoLC)156812711
035			_a14939410
039		9	_a200907081038 _bpuitm2 _c200907020901 _dpuitm2 _y06-26-2009 _zpuitm2
040			_aUKM
082	0	0	_a621.3815/28 _222
090			_aTK7871.96.B55 _bS53 2008
245	0	0	_aSiGe and Si strained-layer epitaxy for silicon heterostructure devices _h[electronic resource] / _cedited by John D. Cressler
260			_aBoca Raton : _bCRC Press/Taylor & Francis, _cc2008
500			_aAccess to 2http://www.engnetbase.com/ejournals/search/advsearch1.asp3 and type in the title. You may access the full text after you type in the advanced search screen
500			_a'The material was previously published in Silicon heterostructure handbook : materials, fabrication, devices, circuits and applications of SiGe and Si strained-layer epitaxy, Taylor and Francis, 2005'--T.p. verso
504			_aIncludes bibliographical references and index
650		0	_aBipolar transistors _xMaterials
650		0	_aHeterostructures
650		0	_aSilicon _xElectric properties
650		0	_aEpitaxy
700	1		_aCressler, John D.
730	0		_aSilicon heterostructure handbook
856	4	0	_uhttps://eresourcesptsl.ukm.remotexs.co/login?url=http://www.engnetbase.com/ejournals/search/advsearch1.asp
856	4	0	_3CRCnetBASE _uhttp://www.engnetbase.com/ejournals/books/book_km.asp?id=6494 _zClick here for the electronic version
907			_a.b14526001 _b2022-04-06 _c2019-11-12
942			_n0 _kTK7871.96.B55 S53 2008
914			_avtls003412368
906			_a7 _bcbc _corignew _d1 _eecip _f20 _gy-gencatlg
990			_aLiza
998			_ae _b2009-01-06 _cm _dz _feng _gflu _y0 _z.b14526001
999			_c444833 _d444833