000 01860cam a2200421 a 4500
005 20250918011654.0
006 m d
007 cr cn ---ancau
008 090626s2008 flua sb 001 0 eng
010 _a2007-030735
020 _a9781420066876
020 _a1420066870
035 _a(OCoLC)ocn159822419
035 _a(OCoLC)159822419
_z(OCoLC)156812713
035 _a14941388
039 9 _y06-26-2009
_zpuitm2
040 _aUKM
082 0 0 _a621.3815/28
_222
090 _aTK7871.96.B55
_bF33 2008
245 0 0 _aFabrication of SiGe HBT BiCMOS technology
_h[electronic resource] /
_cedited by John D. Cressler
260 _aBoca Raton, FL :
_bCRC Press,
_cc2008
500 _aAccess to 2http://www.egnetbase.com/ejournals/search/advsearch1.asp 2and type in the title. You may access the full text after you type in the advanced search screen
504 _aIncludes bibliographical references and index
650 0 _aBipolar transistors
_xDesign and construction
650 0 _aMetal oxide semiconductors, complementary
_xDesign and construction
700 1 _aCressler, John D.
856 4 0 _uhttps://eresourcesptsl.ukm.remotexs.co/login?url=http://www.egnetbase.com/ejournals/search/advsearch1.asp
856 4 0 _3CRCnetBASE
_uhttp://www.engnetbase.com/ejournals/books/book_km.asp?id=6496
_zClick here for the electronic version
907 _a.b14525343
_b2022-04-06
_c2019-11-12
942 _n0
_kTK7871.96.B55 F33 2008
914 _avtls003412299
906 _a7
_bcbc
_corignew
_d1
_eecip
_f20
_gy-gencatlg
990 _aaini
998 _ae
_b2009-01-06
_cm
_dz
_feng
_gflu
_y0
_z.b14525343
999 _c444770
_d444770