000			01457nam a2200337 a 4500
005			20250917235954.0
008			080821s2006 nyua i 001 0 eng d
020			_a9780824725693 _cRM342.97
039		9	_a200901161517 _blan _c200901161203 _dlan _c200812301551 _drahah _y08-21-2008 _zidah
040			_aUKM
090			_aTK7871.85.L566 3
090			_aTK7871.85 _b. L566
100	1		_aLinder, Stefan
245	1	0	_aPower Semiconductors / _cStefan Linder
260			_aNew York : _bCRC Press, _c2006
300			_ax, 267 p. : _bill. ; _c25 cm
440		0	_aEngineering sciences _pElectrical engineering
504			_aIncludes bibliographical references and index
505		0	_aFundamentals of semiconductor physics -- The p-n Junction -- The Pin Diode -- The Bipolar Transistor -- The Thyristor -- The GTO and GTC / IGTC -- The Power MOSFET --the IGBT -- List of symbols -- Constants -- Units -- Unit prefixes -- Writing conventions -- Circuit symbols in electrical engineering -- Material properties at 300 K
650		0	_aPower semiconductors
650		0	_aThyristors
650		0	_aInsulated gate bipolar transistors
650		0	_aMetal oxide semiconductor field-effect transistors
907			_a.b14263063 _b2020-10-15 _c2019-11-12
942			_c01 _n0 _kTK7871.85.L566 3
914			_avtls003384672
990			_arab
991			_aFakulti Kejuruteraan
998			_al _b2008-08-08 _cm _da _feng _gnyu _y0 _z.b14263063
999			_c421433 _d421433