| 000 | 01306cam a22003134a 4500 | ||
|---|---|---|---|
| 005 | 20250917235954.0 | ||
| 008 | 080821s2005 flua bi 001 0 eng | ||
| 020 | _a0849335590 (alk. paper) | ||
| 020 |
_a9780849335594 _cRM594.23 |
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| 039 | 9 |
_a200902251055 _bariff _c200901301632 _drahah _c200808211246 _didah _y08-21-2008 _zidah |
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| 040 | _aUKM | ||
| 050 | 0 | 0 |
_aTK7871.96.B55 _bS55 2005 |
| 090 | _aTK7871.96.B55S558 3 | ||
| 245 | 0 | 0 |
_aSilicon heterostructure handbook : _bmaterials, fabrication, devices, circuits, and applications of SiGe and Si strained-layer epitaxy / _cedited byJohn D. Cressler |
| 260 |
_aBoca Raton, FL : _bCRC Taylor & Francis, _c2006 |
||
| 300 |
_a1 v. (various pagings) : _bill. ; _c26 cm. |
||
| 504 | _aIncludes bibliographical references and index. | ||
| 650 | 0 |
_aBipolar transistors _vHandbooks, manuals, etc. |
|
| 650 | 0 |
_aSilicon _vHandbooks, manuals, etc. |
|
| 700 | 1 | _aCressler, John D. | |
| 856 | 4 | 2 |
_3Publisher description _uhttp://www.loc.gov/catdir/enhancements/fy0648/2005041376-d.html |
| 907 |
_a.b14262964 _b2019-11-12 _c2019-11-12 |
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| 942 |
_c01 _n0 _kTK7871.96.B55S558 3 |
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| 914 | _avtls003384662 | ||
| 990 | _amaa | ||
| 991 | _aJabatan Kejuruteraan Mekanik & Bahan (KMB) | ||
| 998 |
_al _b2008-08-08 _cm _da _feng _gflu _y0 _z.b14262964 |
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| 999 |
_c421423 _d421423 |
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