000 01250nam a2200325 a 4500
005 20250930124333.0
008 080613s2004 my da m 000 0 may
039 9 _a200811171223
_bzarina
_c200811171131
_dzarina
_c200806181356
_dnorehan
_y06-13-2008
_zshahrur
040 _aUKM
040 _aUKM
_cUKM
090 _aTK7871.95 .N877 2004 tesis 3
090 _aTK7871.95
_b.N877 2004 3
100 0 _aNuriha Abd. Rahman
245 1 0 _aPencampur PHEMT GaAs untuk aplikasi pada 28 GHz dan berjalur lebar /
_cNuriha Abd. Rahman
260 _aBangi :
_bFakulti Kejuruteraan, Universiti Kebangsaan Malaysia,
_c2004
300 _axviii, 194 p. :
_bill. ;
_c30 cm.
502 _aTesis (Sarjana Sains) - Universiti Kebangsaan Malaysia, 2004
504 _aRujukan : p. [178]-185
610 2 0 _aUniversiti Kebangsaan Malaysia
_xDissertations
_962865
650 0 _aDissertations, Academic
_zMalaysia
_962866
650 0 _aField effect transistors
650 0 _aGallium arsenide
_959809
907 _a.b14215603
_b2021-05-28
_c2019-11-12
942 _c3
_n0
_kTK7871.95 .N877 2004 tesis 3
914 _avtls003379522
990 _anmk/NY/szj
991 _aFakulti Kejuruteraan
998 _al0013
_b2008-01-06
_cm
_dx
_fmay
_gmy
_y0
_z.b14215603
999 _c416915
_d416915