000			01707nam a22004455a 4500
005			20250914164756.0
006			m d
007			cr nn 008maaau
008			090218s2005 gw j eng d
020			_a9783540314790 (electronic bk.)
020			_a9783540241638 (paper)
035			_a(Springer)978-3-540-24163-8
039		9	_a200902181536 _bmuhaimin _y04-03-2008 _zmuhaimin
050	0	0	_aTA418.9.T45 _bF465 2005
082	0	0	_a621.39732 _222
090			_aTA418.9.T45 _bF395 2005
245	0	0	_aFerroelectric Thin Films _h[electronic resource] : _bBasic Properties and Device Physics for Memory Applications / _cedited by Yoshihiro Ishibashi, Masanori Okuyama.
260			_aBerlin Heidelberg : _bSpringer-Verlag GmbH., _c2005
300			_axiii, 244 p. : _bill., digital ; _c24 cm.
440		0	_aTopics in Applied Physics, _x0303-4216 ; _v98
650		0	_aThin films.
650		0	_aFerroelectricity.
650	1	4	_aPhysics.
650	2	4	_aCrystallography.
650	2	4	_aElectronics and Microelectronics, Instrumentation.
650	2	4	_aMagnetism, Magnetic Materials.
650	2	4	_aMetallic Materials.
650	2	4	_aPhysics and Applied Physics in Engineering.
700	1		_aIshibashi, Yoshihiro.
700	1		_aOkuyama, Masanori.
710	2		_aSpringerLink (Online service)
773	0		_tSpringer e-books
856	4	0	_uhttps://eresourcesptsl.ukm.remotexs.co/login?url=http://dx.doi.org/10.1007/b99517
907			_a.b14123666 _b2022-04-06 _c2019-11-12
942			_n0 _kTA418.9.T45 F395 2005
914			_avtls003369823
998			_ae _b2008-03-04 _cm _dz _feng _ggw _y0 _z.b14123666
999			_c408347 _d408347