000 01413nam a2200301 a 4500
005 20250913113239.0
008 981208s1983 ne o 001 eng
020 _a9024728576
039 9 _a200710190919
_blaili
_c200211111151
_dtrainer
_c200210160900
_dtrainer
_c200210160858
_y08-18-1999
_zload
090 _aQC611.6.R3N37[00008040814]
090 _aQC611.6.R3
_bN37
245 0 0 _aCohesive properties of semiconductors under laser irradiation /
_cedited by Lucien D. Laude
260 _aThe Hague :
_bMartinus Nijhoff,
_c1983
300 _a614 p. ;
_c27 cm.
440 0 _aNATO ASI series.
_nSeries E,
_pApplied sciences ;
_vno. 69
500 _aProceedings of the NATO Advanced Study Institute on Cohesive Properties of Semiconductors under Laser Irradiation, Cargese, Corsica, France, July 19-30, 1982
500 _a'Published in cooperation with NATO Scientific Affairs Division.'
650 0 _aSemiconductors
_xEffect of radiation on
_vCongresses
650 0 _aLaser beams
_vCongresses
700 1 _aLaude, Lucien D.
710 2 _aNATO Advanced Study Institute on Cohesive Properties of Semiconductors under Laser Irradiation
_d(1982 :
_cCargese, Corsica)
907 _a.b10380048
_b2020-10-12
_c2019-11-12
942 _c01
_n0
_kQC611.6.R3N37[00008040814]
914 _avtls000039606
991 _aFakulti Sains dan Sumber Alam
998 _at
_b1999-05-08
_cm
_da
_feng
_gne
_y0
_z.b10380048
999 _c39978
_d39978