000			01544cam a22003737a 4500
005			20250914161719.0
008			070802m20062007njua b 001 0 eng
020			_a9812568352 _cRM198.36
020			_a9789812703835 (v.2) _cRM258.06
020			_a9812703837 (v.2)
039		9	_a200903301349 _bzarina _c200802271433 _dlan _c200802271300 _dlan _c200802271251 _dlan _y08-02-2007 _zrahah
040			_aUKM
090			_aTK7871.15.S56S573 2006 pasca
090			_aTK7871.15.S56 _bS573 2006
245	0	0	_aSiC materials and devices / _cedited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein
260			_aNew Jersey : _bWorld Scientific, _c2006-2007
300			_a2 v : _bill. ; _c26 cm.
440		0	_aSelected topics in electronics and systems ; _vv. 40, 43
500			_aMaterial reprinted from International Journal of High Speed Electronics and Systems, v. 15 no. 4(2005), with original paging in upper corner
650		0	_aSilicon carbide _xElectric properties
650		0	_aSemiconductors
700	1		_aShur, Michael
700	1		_aRumyantsev, Sergey L.
700	1		_aLevinshtein, M. E. _q(Mikhail Efimovich)
730	0	2	_aJournal of high speed electronics & systems
856	4	1	_3Table of contents only _uhttp://www.loc.gov/catdir/toc/fy0709/2007272569.html
907			_a.b1398326x _b2020-10-15 _c2019-11-12
942			_c01 _n0 _kTK7871.15.S56S573 2006 pasca
914			_avtls003354920
990			_arab
991			_aInstitut Sains Angkasa
998			_al _b2007-02-08 _cm _da _feng _gnju _y0 _z.b1398326x
999			_c394829 _d394829