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039		9	_a200710041632 _blaili _y06-19-2007 _zzulkifli
090			_aTK7871.95.K493 2006 tesis 3
090			_aTK7871.95 _b.K493 2006 3
100	0		_aKhairul Nisha Mohd. Kharuddin
245	1	0	_aKajian tentang ciri-ciri elektrik transistor elektron kelincahan tinggi pseudomorfik (PHEMT) dalam regim nano / _cKhairul Nisha bt. Mohd. Kharuddin
260			_aBangi : _bFakulti Kejuruteraan, Universiti Kebangsaan Malaysia, _c2006
300			_axv, 139 p. : _bcharts. ; _c30 cm.
502			_aTesis (Sarjana Sains) - Universiti Kebangsaan Malaysia, 2006
504			_aRujukan : p. [121]-128
610	2	0	_aUniversiti Kebangsaan Malaysia _xDissertations _962865
650		0	_aDissertations, Academic _zMalaysia _962866
650		0	_aField-effect transistors
650		0	_aHeterojunctions
650		0	_aNanostructures _960468
907			_a.b13951440 _b2021-05-28 _c2019-11-12
942			_c3 _n0 _kTK7871.95.K493 2006 tesis 3
914			_avtls003351453
990			_aNY/nms
991			_aFakulti Kejuruteraan
998			_al0013 _b2007-06-06 _cm _dx _fmay _gmy _y0 _z.b13951440
999			_c391867 _d391867