| 000 | 01165nam a2200313 a 4500 | ||
|---|---|---|---|
| 005 | 20250914143513.0 | ||
| 008 | 050912s2006 xxua b 001 0 eng | ||
| 020 | _a9780387280028 (hbk.) | ||
| 020 |
_a0387280022 (hbk.) _cRM351.52 |
||
| 039 | 9 |
_a201207271000 _byah _c200608231142 _ddollah _c200608071556 _dfati _c200607250914 _didah _y05-22-2006 _zzakir |
|
| 090 | _aT174.7.L863 3 | ||
| 090 |
_aT174.7 _b.L863 |
||
| 100 | 1 | _aLundstrom, Mark | |
| 245 | 1 | 0 |
_aNanoscale transistors : _bdevice physics, modeling and simulation / _cMark S. Lundstrom, Jing Guo |
| 260 |
_aNew York : _bSpringer, _c2006 |
||
| 300 |
_avi, 217 p. : _bill. ; _c24 cm. |
||
| 504 | _aIncludes bibliographical references and index | ||
| 650 | 0 | _aNanotechnology | |
| 650 | 0 |
_aMetal oxide semiconductor field-effect transistors _xMathematical models |
|
| 650 | 0 |
_aNanostructured materials _xMathematical models |
|
| 700 | 1 | _aGuo, Jing | |
| 907 |
_a.b1373409x _b2021-05-28 _c2019-11-12 |
||
| 942 |
_c01 _n0 _kT174.7.L863 3 |
||
| 914 | _avtls003327695 | ||
| 990 | _afka | ||
| 991 | _aInstitut Sains Angkasa - Pasca | ||
| 998 |
_al _b2006-09-05 _cm _da _feng _gxxu _y0 _z.b1373409x |
||
| 999 |
_c371818 _d371818 |
||