000 01086nam a2200289 a 4500
005 20250930115640.0
008 040428s2001 au a 001 0 eng
020 _a3211837086
_cRM390.40
039 9 _a200406111451
_bhamka
_c200405290859
_ddiana
_y04-28-2004
_zzakir
090 _aTK7871.85.S558
090 _aTK7871.85
245 0 0 _aSimulation of semiconductor processes and device 2001 /
_cDimitris Tsoukalas, Christos Tsamis, (eds.)
260 _aWien :
_bSpringer,
_c2001
650 0 _aSemiconductors
_xMathematical models
_vCongresses
_963615
650 0 _aSemiconductors
_xDefects
_vCongresses
650 0 _aSolid states physics
_vCongresses
700 1 _aTsoukalas, Dimitris
700 1 _aTsamis, Christos
711 2 _aInternational Conference on Simulation of Semiconductor Devices and Processes SISPAD'01
_n(
_d2001 :
_cAthens)
907 _a.b13371472
_b2021-05-28
_c2019-11-12
942 _c01
_n0
_kTK7871.85.S558
914 _avtls003288784
990 _aSbs/ndr
991 _aProgram Fizik
998 _al
_b2004-02-04
_cm
_da
_feng
_gau
_y0
_z.b13371472
999 _c336506
_d336506