| 000 | 00977nam a2200277 a 4500 | ||
|---|---|---|---|
| 005 | 20250914123235.0 | ||
| 007 | hd ufu baaa | ||
| 008 | 020609s1997 my a am 00 may | ||
| 039 | 9 |
_a200711140935 _bnordin _y06-09-2002 _ztrainer |
|
| 090 | _amikrofilem tesis QD181.S6S24 1997 | ||
| 090 |
_amikrofilem tesis QD181.S6 _bS24 1997 |
||
| 100 | 0 | _aSakina Farikhullah Khan | |
| 245 | 1 |
_aPencirian SiO2 untuk fabrikasi transistor MOS _h[microform] / _cSakina Farikhullah Khan |
|
| 260 |
_aBangi : _bPerpustakaan Tun Seri Lanang, _c1997 |
||
| 300 |
_a1microfilm reel ; _c35mm |
||
| 502 | _aTesis (Sarjana Sains) - Universiti Kebangsaan Malaysia, 1997 | ||
| 650 | 0 | _aSilicon oxide | |
| 650 | 0 | _aOxidation | |
| 907 |
_a.b13021801 _b2022-05-23 _c2019-11-12 |
||
| 942 |
_c3 _n0 _kmikrofilem tesis QD181.S6S24 1997 |
||
| 914 | _avtls000314446 | ||
| 990 | _aJJ | ||
| 991 | _aFakulti Kejuruteraan | ||
| 998 |
_at _b2002-09-06 _cm _dy _fmay _gmy _y0 _z.b13021801 |
||
| 999 |
_c302339 _d302339 |
||