| 000 | 00941nam a2200277 a 4500 | ||
|---|---|---|---|
| 005 | 20250914091018.0 | ||
| 008 | 991115s1997 my a m 000 0 may | ||
| 039 | 9 |
_a199911151546 _btmleng _y11-15-1999 _ztmleng |
|
| 090 | _aQD181.S6S24 1997 tesis | ||
| 090 | _aQD181 | ||
| 100 | 0 | _aSakina Farikhullah Khan | |
| 245 | 1 |
_aPencirian SiO2 untuk fabrikasi transistor MOS / _cSakina Farikhullah Khan |
|
| 260 |
_aBangi : _bFakulti Kejuruteraan, Universiti Kebangsaan, _c1997 |
||
| 300 |
_a146 p. : _bill. ; _c30 cm. |
||
| 502 | _aTesis (Sarjana Sains) - Universiti Kebangsaan Malaysia, 1997 | ||
| 504 | _aReferences: p. 113-117 | ||
| 650 | 0 | _aSilicon oxide | |
| 650 | 0 | _aOxidation | |
| 907 |
_a.b12556427 _b2021-05-28 _c2019-11-12 |
||
| 942 |
_c3 _n0 _kQD181.S6S24 1997 tesis |
||
| 914 | _avtls000263736 | ||
| 990 | _altm | ||
| 991 | _aFakulti Kejuruteraan | ||
| 998 |
_at _b1999-02-11 _cm _dx _fmay _gmy _y0 _z.b12556427 |
||
| 999 |
_c256776 _d256776 |
||