| 000 | 01012nam a2200277 a 4500 | ||
|---|---|---|---|
| 005 | 20250914083244.0 | ||
| 008 | 981208s1983 xxua 001 0 eng d | ||
| 039 | 9 |
_a201212161537 _bzaina _y08-18-1999 _zload |
|
| 040 | _dUKM | ||
| 090 |
_aTK7871.96.B55 _bW37 |
||
| 090 |
_aTK7871.96.B55 _bW37 3 |
||
| 100 | 1 | _aWarner, R. M. | |
| 245 | 1 | 0 |
_aTransistors : _bfundamentals for the integrated-circuit engineer / _cR.M. Warner, Jr., B.L. Grung. |
| 260 |
_aNew York : _bWiley, _c1983. |
||
| 300 |
_axix, 875 p. : _bill. ; _c24 cm. |
||
| 500 | _a'A Wiley-Interscience publication.' | ||
| 504 | _aIncludes bibliographical references and indexes. | ||
| 650 | 0 | _aBipolar transistors. | |
| 650 | 0 |
_aMetal oxide semiconductor field _xeffect transistors. |
|
| 700 | 1 | _aGrung, B. L. | |
| 907 |
_a.b12377491 _b2024-07-02 _c2019-11-12 |
||
| 942 |
_c01 _n0 _kTK7871.96.B55 W37 |
||
| 914 | _avtls000245187 | ||
| 991 | _aFakulti Kejuruteraan dan Alam Bina. | ||
| 998 |
_al _at _b1999-05-08 _cm _da _feng _gxxu _y0 _z.b12377491 |
||
| 999 |
_c239038 _d239038 |
||