| 000 | 00990nam a2200265 a 4500 | ||
|---|---|---|---|
| 005 | 20250914080945.0 | ||
| 008 | 981208s1996 my 00 eng | ||
| 039 | 9 |
_a201212131627 _byah _y08-18-1999 _zload |
|
| 090 | _aTK7871.95.K37 1996 3tesis | ||
| 090 |
_aTK7871.95 _b.K37 1996 3 |
||
| 100 | 1 | _aKarim, Mohammed Fakhrul | |
| 245 | 1 | 0 |
_aStudy of tunneling and breakdown mechanisms of gate oxide in MOSFET _cMohammed Fakhrul Karim |
| 260 |
_aUniversiti Kebangsaan Malaysia, Bangi _bFaculty of Engineering _c1996 |
||
| 300 | _a129 p. : ill. ; 30 cm. | ||
| 502 | _aThesis (M.Sc.) - Universiti Kebangsaan Malaysia, 1996 | ||
| 504 | _aReferences : p. 118-123 | ||
| 650 | 0 |
_aMetal oxide semiconductor field _xeffect transistors |
|
| 907 |
_a.b12241210 _b2025-07-18 _c2019-11-12 |
||
| 942 |
_c3 _n0 _kTK7871.95.K37 1996 3tesis |
||
| 914 | _avtls000231254 | ||
| 990 | _altm | ||
| 991 | _aFakulti Kejuruteraan | ||
| 998 |
_al _b1999-05-08 _cm _dx _feng _gmy _y0 _z.b12241210 |
||
| 999 |
_c225518 _d225518 |
||