000 00979nam a2200301 a 4500
005 20250930104248.0
008 981208s1983 xxc 00 eng
035 _a553653
039 9 _y08-18-1999
_zload
090 _aTK7871.95.K46 1983 4
090 _aTK7871.95
100 1 _aKendall, James D.
_q(James Douglas),
_d1959-
_939117
245 1 2 _aA punchthrough current model for short-channel MOSFETs
_cby James D. Kendall
260 _aOttawa
_bCarleton University
_c1983
300 _a117 p. ; 30 cm.
502 _aThesis (Master of Engineering) - Carleton University, 1983
504 _ap. 102-103
590 _a1
650 _aMetal oxide semiconductor field
_xeffect transistors
907 _a.b11926181
_b2021-05-28
_c2019-11-12
942 _c3
_n0
_kTK7871.95.K46 1983 4
914 _avtls000199141
990 _aHY
991 _aFakulti Kejuruteraan
998 _at
_b1999-05-08
_cm
_da
_feng
_gxxc
_y0
_z.b11926181
999 _c194184
_d194184