| 000 | 00990aam a2200277 a 4500 | ||
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| 005 | 20250930102307.0 | ||
| 008 | 981208s1982 xxua b 001 eng d | ||
| 020 | _a0471085006 | ||
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_a201904030901 _bhamka _c200108081848 _dbedah _y08-18-1999 _zload |
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| 090 | _aTK7871.99.M44N52 3 | ||
| 090 |
_aTK7871.99 _b.M44N52 |
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| 100 | 1 | _aNicollian, E. H. | |
| 245 | 1 | 0 |
_aMOS (metal oxide semiconductor) physics and technology / _cE. H. Nicollian, J. R. Brews |
| 260 |
_aNew York : _bJohn Wiley & Sons, _c1982 |
||
| 300 |
_a906 p. : _bill. ; _c24 cm. |
||
| 500 | _a'A Wiley-Interscience publication.' | ||
| 504 | _aIncludes bibliographical references and index | ||
| 650 | 0 | _aMetal oxide semiconductors | |
| 700 | 1 |
_aBrews, J. R. _935529 |
|
| 907 |
_a.b1152084x _b2020-10-15 _c2019-11-12 |
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_c01 _n0 _kTK7871.99.M44N52 3 |
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| 914 | _avtls000157657 | ||
| 991 | _aFakulti Sains Fizik dan Gunaan | ||
| 998 |
_al _at _b1999-05-08 _cm _da _feng _gxxu _y0 _z.b1152084x |
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| 999 |
_c153744 _d153744 |
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