000 01133nam a2200301 a 4500
005 20250914013607.0
008 981208s1980 xxu bm 00 eng
039 9 _a201811280907
_bbaiti
_c200708181436
_drashid
_y08-18-1999
_zload
040 _aUKM
_erda
090 _amikrofis tesis QD921.D76 1980
090 _amikrofis tesis QD921
_b.D76 1980
100 1 _aDrosd, Robert M.
_eauthor.
245 1 2 _aA model of the recrystallization mechanism of amorphous silicon layers created by ion implantation /
_cRobert M. Drosd
264 1 _aAnn Arbor, Mich. :
_bUniversity Microfilms International ,
_c1980
300 _a1 microfiche ;
_c11 x 15 cm.
336 _atext
_2rdacontent
337 _amicroform
_2rdamedia
338 _amicrofiche
_2rdacarrier
502 _aThesis (Ph.D.)-University of California, 1979
650 0 _aSilicon crystals.
650 0 _aThin films.
907 _a.b11492934
_b2021-02-04
_c2019-11-12
942 _c3
_n0
_kmikrofis tesis QD921.D76 1980
914 _avtls000154767
990 _aky
991 _aFakulti Sains Fizik dan Gunaan
998 _at
_b1999-05-08
_cm
_dy
_feng
_gxxu
_y0
_z.b11492934
999 _c150961
_d150961