Nanoscale silicon devices / 
edited by Shunri Oda, David K. Ferry. 
 - xii, 288 pages, 8 unnumbered pages of plates :  illustrations (some color) ;  24 cm. 
<br/><br/>Includes bibliographical references and index. 
<br/><br/> Physics of silicon nanodevices /  Tri-gate transistors /  Variability in scaled MOSFETs /  Self-heating effects in nanoscale 3D MOSFETs /  Spintronics-based nonvolatile computing systems /  NEMS devices /  Tunnel FETs for more energy-efficient computing /  Dopant-atom silicon tunneling nanodevices /  Single-electron transfer in Si nanowires /  Coupled Si quantum dots for spin-based qubits /  Potential of nonvolatile magnetoelectric devices for spintronic applications /  David K. Ferry and Richard Akis --  Suman Datta --  Toshiro Hiramoto --  Tsunaki Takahashi and Ken Uchida --  Tetsuo Endoh --  Yoshishige Tsuchiya and Hiroshi Mizuta --  Adrian M. Ionescu --  Daniel Moraru and Michiharu Tabe --  Akira Fujiwara, Gento Yamahata, and Katsuhiko Nishiguchi --  Tetsuo Kodera and Shunri Oda --  Peter A. Dowben, Christian Binek, and Dmitri E. Nikonov. 
<br/><br/><label>ISBN: </label>9781138749320  RM273.05 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Nanoelectromechanical systems.<br/>Nanotechnology.<br/>Silicon crystals--Electric properties.