TY  - BOOK
AU  - Cressler,John D.
TI  - SiGe and Si strained-layer epitaxy for silicon heterostructure devices
SN  - 9781420066852
U1  - 621.3815/28 22
PY  - 2008///
CY  - Boca Raton
PB  - CRC Press/Taylor & Francis
KW  - Bipolar transistors
KW  - Materials
KW  - Heterostructures
KW  - Silicon
KW  - Electric properties
KW  - Epitaxy
N1  - Access to 2http://www.engnetbase.com/ejournals/search/advsearch1.asp3 and type in the title. You may access the full text after you type in the advanced search screen; 'The material was previously published in Silicon heterostructure handbook : materials, fabrication, devices, circuits and applications of SiGe and Si strained-layer epitaxy, Taylor and Francis, 2005'--T.p. verso; Includes bibliographical references and index
UR  - https://eresourcesptsl.ukm.remotexs.co/login?url=http://www.engnetbase.com/ejournals/search/advsearch1.asp
UR  - http://www.engnetbase.com/ejournals/books/book_km.asp?id=6494
ER  -