SiGe and Si strained-layer epitaxy for silicon heterostructure devices - Cressler, John D. (Boca Raton : CRC Press/Taylor & Francis, 2008)
Access to 2http://www.engnetbase.com/ejournals/search/advsearch1.asp3 and type in the title. You may access the full text after you type in the advanced search screen
'The material was previously published in Silicon heterostructure handbook : materials, fabrication, devices, circuits and applications of SiGe and Si strained-layer epitaxy, Taylor and Francis, 2005'--T.p. verso
Includes bibliographical references and index
Keywords: Bipolar transistors -- Materials; Heterostructures; Silicon -- Electric properties; Epitaxy