SiGe and Si strained-layer epitaxy for silicon heterostructure devices  [electronic resource] / 
edited by John D. Cressler 
 - Boca Raton :  CRC Press/Taylor & Francis,  c2008 
<br/><br/> Access to 2http://www.engnetbase.com/ejournals/search/advsearch1.asp3 and type in the title. You may access the full text after you type in the advanced search screen  'The material was previously published in Silicon heterostructure handbook : materials, fabrication, devices, circuits and applications of SiGe and Si strained-layer epitaxy, Taylor and Francis, 2005'--T.p. verso 
<br/><br/>Includes bibliographical references and index 
<br/><br/><label>ISBN: </label>9781420066852 1420066854 
<br/><br/><label>LCCN: </label>2007-030343 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Bipolar transistors--Materials<br/>Heterostructures<br/>Silicon--Electric properties<br/>Epitaxy
<br/><br/><label>Dewey Class. No.: </label>621.3815/28