Lundstrom, Mark <br/><br/>
Nanoscale transistors :  device physics, modeling and simulation / 
Mark S. Lundstrom, Jing Guo 
 - New York :  Springer,  2006 
 - vi, 217 p. :  ill. ;  24 cm. 
<br/><br/>Includes bibliographical references and index 
<br/><br/><label>ISBN: </label>9780387280028 (hbk.) 0387280022 (hbk.)  RM351.52 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Nanotechnology<br/>Metal oxide semiconductor field-effect transistors--Mathematical models<br/>Nanostructured materials--Mathematical models