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Penumbuhan lapisan epitaksi transistor elektron berkelincahan tinggi (HEMT) menggunakan teknologi MBE

Burhanuddin Yeop Majlis

Penumbuhan lapisan epitaksi transistor elektron berkelincahan tinggi (HEMT) menggunakan teknologi MBE [article] / Burhanuddin Yeop Majlis,Abdul Fatah Awang Mat & Dee Chang Fu

PTSL Koleksi Asia Tenggara (jilid 1: Pages 195 - 197)

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Penumbuhan lapisan epitaksi transistor elektron berkelincahan tinggi (HEMT) menggunakan teknologi MBE

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