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Kesan sepuhlindap ke atas ciri elektrik sentuhan Ohmik dan Schottky untuk peranti transistor elektron berkelincahan tinggi (HEMTs) /

Asban Dolah,

Kesan sepuhlindap ke atas ciri elektrik sentuhan Ohmik dan Schottky untuk peranti transistor elektron berkelincahan tinggi (HEMTs) / Asban Dolah. - xiv, 127 pages, charts, illustrations, samples ; 30 cm.

Tesis (Sarjana Sains) - Universiti Kebangsaan Malaysia, 2015.

Rujukan : mukasurat [93]-100.

Subjects--Corporate Names:
Universiti Kebangsaan Malaysia--Dissertations.

Subjects--Topical Terms:
Metal semiconductor field-effect transistors.
Gallium arsenide semiconductors.
Dissertations, Academic--Malaysia.

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Kesan sepuhlindap ke atas ciri elektrik sentuhan Ohmik dan Schottky untuk peranti transistor elektron berkelincahan tinggi (HEMTs) /

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