Nanoscale Transistors Device Physics, Modeling and Simulation /
Lundstrom, Mark S.
Nanoscale Transistors Device Physics, Modeling and Simulation / [electronic resource] : by Mark S. Lundstrom, Jing Guo. - Boston, MA : Springer Science+Business Media, Inc., 2006. - vi, 217 p. : ill., digital ; 24 cm.
9780387280035 (electronic bk.) 9780387280028 (paper)
Nanotechnology.
Metal oxide semiconductor field-effect transistors--Mathematical models.
Nanostructured materials--Mathematical models.
T174.7 / .L86 2006
621.381528
Nanoscale Transistors Device Physics, Modeling and Simulation / [electronic resource] : by Mark S. Lundstrom, Jing Guo. - Boston, MA : Springer Science+Business Media, Inc., 2006. - vi, 217 p. : ill., digital ; 24 cm.
9780387280035 (electronic bk.) 9780387280028 (paper)
Nanotechnology.
Metal oxide semiconductor field-effect transistors--Mathematical models.
Nanostructured materials--Mathematical models.
T174.7 / .L86 2006
621.381528
