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Ferroelectric Thin Films Basic Properties and Device Physics for Memory Applications /

Ferroelectric Thin Films Basic Properties and Device Physics for Memory Applications / [electronic resource] : edited by Yoshihiro Ishibashi, Masanori Okuyama. - Berlin Heidelberg : Springer-Verlag GmbH., 2005 - xiii, 244 p. : ill., digital ; 24 cm. - Topics in Applied Physics, 98 0303-4216 ; .

ISBN: 9783540314790 (electronic bk.) 9783540241638 (paper)

Subjects--Topical Terms:
Thin films.
Ferroelectricity.
Physics.
Crystallography.
Electronics and Microelectronics, Instrumentation.
Magnetism, Magnetic Materials.
Metallic Materials.
Physics and Applied Physics in Engineering.

LC Class. No.: TA418.9.T45 / F465 2005

Dewey Class. No.: 621.39732

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Ferroelectric Thin Films Basic Properties and Device Physics for Memory Applications /

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