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A model of the recrystallization mechanism of amorphous silicon layers created by ion implantation /

Drosd, Robert M.

A model of the recrystallization mechanism of amorphous silicon layers created by ion implantation / Robert M. Drosd - 1 microfiche ; 11 x 15 cm.

Thesis (Ph.D.)-University of California, 1979

Subjects--Topical Terms:
Silicon crystals.
Thin films.

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A model of the recrystallization mechanism of amorphous silicon layers created by ion implantation /

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